7000+ Optoelectronic Devices Multiple Choice Questions Pdf - 2

Question: 6

Material used for fabrication of tunnel diode is

(A) Ge and Insb

(B) Si and Insb

(C) Si and GaAs

(D) Ge or GaAs

Question: 7

Silicon is not suitable for fabrication of light emitting diodes because it is

(A) A narrow bandgap semiconductor

(B) A wide bandgap semiconductor

(C) A direct bandgap semiconductor

(D) An indirect band gap semiconductor

Question: 8

Which is the diode used for measuring light intensity?

(A) Photodiode

(B) Tunnel diode

(C) Varactor diode

(D) Junction diode

Question: 9

The main reason why electrons can tunnel

(A) Impurity level is low

(B) Depletion layer is extremely thin

(C) Barrier potential is very low

(D) They have high energy

Question: 10

A zener diode works on the principle of

(A) Hopping of charge carriers across the junction

(B) Diffusion of charge carriers across the junction

(C) Thermionic emission

(D) Tunneling of charge carriers across the junction