7000+ Aptitude Test for Electronics and Communication Engineering - 2

Question: 6

Atomic number of silicon is

(A) 12

(B) 14

(C) 16

(D) 18

Question: 7

Drift current in semiconductors depends upon

(A) both the electric field and the carrier concentration

(B) both the electric field and the carrier concentration gradient

(C) only the electric field

(D) only the carrier concentration gradient

Question: 8

At room temperature, the current in an intrinsic semiconductor changes in its directions. This phenomenon is due to

(A) holes

(B) electrons

(C) holes and electrons

(D) ions

Question: 9

Mobility is defined as

(A) number of free electrons/number of bounds electrons

(B) displacement per unit field

(C) diffusion velocity per unit field

(D) drift velocity per unit field

Question: 10

An electron device means the device in which the conduction of electrons takes place through

(A) a semiconductor

(B) a gas, semiconductor or vacuum

(C) a gas

(D) vacuum