7000+ Aptitude Test for Electronics and Communication Engineering - 1

Question: 1

Heat conduction in a semiconductor takes place

(A) due to energy gap between conduction band and valence band

(B) by the electrons and thermal vibration of atoms

(C) by the holes and thermal vibrations of atoms

(D) by the mobility of the carriers

Question: 2

Ripple rejection ratio of voltage regulator is the ratio of

(A) input ripple voltage to output ripple voltage

(B) input power to output power of regulator

(C) output voltage to input ripple voltage

(D) output power to input power of regulator

Question: 3

The mobility of electrons in a semiconductor is defined as the

(A) drift velocity per unit electric field

(B) drift velocity per unit magnetic field

(C) diffusion velocity per unit magnetic field

(D) diffusion velocity per unit electric field

Question: 4

For a transistor, turn-off time is

(A) sum of rise time and fall time

(B) maximum value of fall time

(C) maximum value of storage time

(D) sum of storage time and fall time

Question: 5

The electrical conductivity of pure semiconductor is

(A) increases exponentially with temperature

(B) decreases exponentially with temperature

(C) proportional to temperature

(D) not altered with temperature