Power Semiconductor Device and Integrated Circuits Questions - 2

Question: 6

In CMOS technology, shallow P-well or N-well regions can be formed using

(A) low temperature dry oxidation

(B) low energy ion-implantation

(C) low energy sputtering

(D) low pressure chemical vapour deposition

Question: 7

The most significant factor in the relative manufacturing cost of IC components is

(A) the area occupied by the component

(B) the position of the component on the site

(C) the shape of the components

(D) number of electrode connections

Question: 8

Which of the following transistors is symmetrical in the same that emitter and collector or source and drain terminals can be interchanged?

(A) PNP transistor

(B) NPN transistor

(C) MOSFET

(D) JFET

Question: 9

Most important advantage of an IC is its

(A) very small weight

(B) very low cost

(C) extremely high reliability

(D) extremely small size

Question: 10

Which of the following does not cause permanent damage to an SCR?

(A) high rate rise of voltage

(B) high temperature rise

(C) high rate of rise of current

(D) high current