Basic Electrical Engineering Interview Questions and Answers Pdf - 3

Question: 11

The reverse current of a silicon diode is

(A) highly temperature sensitive

(B) highly bias voltage sensitive

(C) both bias voltage and temperature sensitive

(D) independent of bias voltage and temperature

Question: 12

The effective channel length of a MOSFET in saturation decreases with increase in

(A) drain voltage

(B) gate voltage

(C) source voltage

(D) body voltage

Question: 13

In a semiconductor diode, cut in voltage is the voltage

(A) at which the current is 10% of the maximum rated current

(B) at which depletion layer is formed

(C) upto which the current is zero

(D) upto which the current is very small

Question: 14

The electrical conductivity of a semiconductor increases with increase in temperature because

(A) thermal energy of electrons increases

(B) the mobility of the carriers increases

(C) the carrier concentration increases

(D) both carrier concentration and mobility increases

Question: 15

For small signal ac operation, a practical forward biased diode can be modelled as

(A) a resistance

(B) a resistance and an ideal diode in series

(C) an ideal diode and resistance in parallel

(D) a resistance and a capacitance in series